JEDEC - JEP195
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
active, Most Current
| Organization: | JEDEC |
| Publication Date: | 1 February 2023 |
| Status: | active |
| Page Count: | 22 |
scope:
The scope of this document covers SiC-based PECS having a gate dielectric region biased to turn devices on and off. This document should enable the reader to evaluate the consequences of SiC MOSFET specific parametric drift mechanism called "gate switching instability" for the device and/or the application. Additionally, the gate switching stress (GSS) test is described, enabling the calculation/measurem
Document History
JEP195
February 1, 2023
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
The scope of this document covers SiC-based PECS having a gate dielectric region biased to turn devices on and off. This document should enable the reader to evaluate the consequences of SiC MOSFET...