JEDEC JEP 184
Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
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| Organization: | JEDEC |
| Publication Date: | 1 March 2021 |
| Status: | active |
| Page Count: | 44 |
scope:
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well.
This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. But it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.
Document History
JEDEC JEP 184
March 1, 2021
Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this...