DLA - SMD-5962-93173 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9, PARALLEL FIFO,MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 6 February 2023 |
| Status: | active |
| Page Count: | 29 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD-5962-93173 REV B
February 6, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9, PARALLEL FIFO,MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
January 24, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 29, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...