DLA - SMD-5962-18216
MICROCIRCUIT, MEMORY, DIGITAL, CMOS RADIATION HARDENED, FERROELECTRIC RANDOM ACCESS MEMORY (FRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 21 April 2023 |
| Status: | inactive |
| Page Count: | 21 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
December 4, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS RADIATION HARDENED, 256K x 8-BIT FERROELECTRIC RANDOM ACCESS MEMORY (FRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
SMD-5962-18216
April 21, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS RADIATION HARDENED, FERROELECTRIC RANDOM ACCESS MEMORY (FRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...