DLA - MIL-PRF-19500/552J (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, AND JANTXV
active, Most Current
| Organization: | DLA |
| Publication Date: | 14 June 2023 |
| Status: | active |
| Page Count: | 21 |
scope:
Scope.
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/552J (1)
June 14, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for...
July 5, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
May 12, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
September 22, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
May 28, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, 1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
September 12, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, 1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
May 14, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, 1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
February 21, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
December 4, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
May 14, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in...
August 29, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES IN6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US JAN, JANTX, AND JANTXV
A description is not available for this item.
October 15, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500-watt peak pulse power silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device...
February 12, 1996
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476 JAN, JANTX, AND JANTXV
A description is not available for this item.
January 25, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476 JAN, JANTX, AND JANTXV
A description is not available for this item.
December 27, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476 JAN, JANTX, AND JANTXV
This specification covers the detail requirements for 1,500-watt peak pulse power silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as...
October 26, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476 JAN, JANTX, AND JANTXV
A description is not available for this item.