NPFC - MIL-S-19500/552
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476 JAN, JANTX, AND JANTXV
| Organization: | NPFC |
| Publication Date: | 27 December 1993 |
| Status: | inactive |
| Page Count: | 12 |
scope:
This specification covers the detail requirements for 1,500-watt peak pulse power silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1.
Maximum ratings are as shown in columns 5 through 8 of table III herein and as follows:
PR = 3 W (derate at 20 mW/°C above TA = +25°C) (see figure 2).
PPP = 1,500 W (see figure 3) at tP = 1 ms.
IFSM = 130 A(pk) at +50°C. tP = 8.33 ms (TA = +25°C).
−55°C ≤ TOP ≤ +175°C; −55°C ≤ TSTG ≤ +175°C (ambient).
Primary electrical characteristic are as shown in columns 2 and 4 of table III herein. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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