NPFC - MIL-PRF-19500/552
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US JAN, JANTX, AND JANTXV
| Organization: | NPFC |
| Publication Date: | 15 October 1998 |
| Status: | inactive |
| Page Count: | 14 |
scope:
This specification covers the performance requirements for 1,500-watt peak pulse power silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
See figures 1 (similar to DO - 7) and 2 (surface mount).
Maximum ratings are as shown in columns 5 through 8 of table III herein and as follows:
PR = 3 W (derate at 20 mW/°C above TA = +25°C (seE figure 3)h. (derate at 100 mW/°C above TEC = +145°C for surface mount devices) (see figure 3). PPP = 1,500 W (see figure 3) at tp = 1 ms. IFSM = 130 A(pk). TP = 8.33 ms (TA = +25°C). −55°C≤ TOP≤ +175°C; −55°C≤ TSTGS ≤ +175°C (ambient).
Primary electrical characteristic are as shown in columns 2 and 4 of table III herein. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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