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BSI - BS ISO 5618-1

Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for GaN crystal surface defects Part 1: Classification of defects

active, Most Current
Organization: BSI
Publication Date: 30 November 2023
Status: active
Page Count: 16
ICS Code (Advanced ceramics): 81.060.30

Document History

BS ISO 5618-1
November 30, 2023
Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for GaN crystal surface defects Part 1: Classification of defects
A description is not available for this item.

References

This document references:
IEC 63068-1 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Published by IEC on January 1, 2019
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and...
This document references:
DIS 5618-2 - Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method of determining the etch pit density
Published by ISO on October 9, 2023
This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or...
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