IEC 63068-1
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
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| Organization: | IEC |
| Publication Date: | 1 January 2019 |
| Status: | active |
| Page Count: | 28 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence),
Document History
IEC 63068-1
January 1, 2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and...