ISO - DIS 5618-2
Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method of determining the etch pit density
pending, Most Current
| Organization: | ISO |
| Publication Date: | 9 October 2023 |
| Status: | pending |
| Page Count: | 32 |
| ICS Code (Advanced ceramics): | 81.060.30 |
scope:
This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduce
It is applicable to the defects specified in DIS 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.
It is applicable to defects with an etch pit density of 7 × 107 cm-2 or lower.
Document History
DIS 5618-2
October 9, 2023
Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method of determining the etch pit density
This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or...