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IEEE C62.35

Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

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Organization: IEEE
Publication Date: 25 March 2010
Status: active
Page Count: 26
scope:

This standard applies to two terminal or multiple terminal silicon avalanche breakdown diodes (ABD), which are one type of surge protective device component (SPDC). In this document, these devices will be called ABDs. ABDs limit (clamp) transient voltages and divert transient currents. This standard contains terms, symbols and definitions, and provides test methods for verifying ratings and measuring device characteristics. Service conditions and failure mode are also provided. This standard may also apply to other silicon surge protective device components with similar V-I characteristics.

Document History

December 5, 2018
Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components - Corrigendum 1
A description is not available for this item.
April 1, 2018
Draft Standard for Test Methods for Silicon Avalanche Semiconductor Surge Protective Device Components
This standard applies to the avalanche breakdown diodes 1 used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc. The avalanche breakdown  diode surge...
IEEE C62.35
March 25, 2010
Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
This standard applies to two terminal or multiple terminal silicon avalanche breakdown diodes (ABD), which are one type of surge protective device component (SPDC). In this document, these devices...
January 1, 1987
Standard Test Specifications for Avalanche Junction Semiconductor Surge-Protective Devices
This standard applies to a two terminal avalanche junction surge suppressor for surge protective application on systems with dc to 420 Hz frequency and voltages equal to or less than 1000 V rms or...

References

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