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DOD - SMD 5962-92101

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 12 February 2013
Status: active
Page Count: 28
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 8, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
SMD 5962-92101
February 12, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 11, 1995
MICROCIRCUIT, MEMORY, CMOS, 512 X 18 PARALLEL FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
August 31, 1993
MICROCIRCUIT, MEMORY, CMOS, 512 X 18 PARALLEL FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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