scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliabitity (device classes Q and M) and space application (device class V), and a choice of case outlines and Lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 4011B Radiation hardened CMOS quad 2-input NAND gate 02 4012B Radiation hardened CMOS dual 4-input NAND gate 03 4023B Radiation hardened CMOS triple 3-input NAND gate 04 4011BN Radiation hardened CMOS quad 2-input NAND gate with neutron irradiated die 05 4012BN Radiation hardened CMOS dual 4-input NAND gate with neutron irradiated die 06 4023BN Radiation hardened CMOS triple 3-input NAND gate with neutron irradiated die

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X", shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +20 V dc Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to V_DD + 0.5 Vdc DC input current, any one input . . . . . . . . . . . . . . . . . . . . . . ±l0 mA Device dissipation per output transistor . . . . . . . . . . . . . . . . . 100 mW Storage temperature range (T_STG) . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . +265°C Thermal resistance, junction-to-case (Θ_JC): Case C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24°C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W Thermal resistance, junction-to-ambient Θ_JA): Case C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74°C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116°C/W Junction temperature (T_J) . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Maximum power dissipation at T_A = +125°C (P_D): 4/ Case C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68 W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.43 W

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 V dc to +18 V dc Case operating temperature range (T_C) . . . . . . . . . . . . . . . . . . . −55°C to +125°C Input voltage (V_IN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Output voltage (V_OUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Radiation features: Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 × 10⁵ Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) . . . . . >75 MEV/cm²/mg) 5/ Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . . . > 5 × 10⁸ Rads(Si)/s 5/ Dose rate latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . > 2 × 10⁸ Rads(Si)/s 5/ Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . . . > 5 × 10¹¹ Rads(Si)/s 5/ Neutron irradiated (device types 04, 05, and 06) . . . . . . . . . . . . > 1 × 10¹⁴ neutrons/cm²

intended Use: