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DOD - SMD 5962-98537

MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 24 June 2014
Status: inactive
Page Count: 32
scope:

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

May 28, 2019
MICROCIRCUIT, MEMORY, DIGITAL, RADIATIONHARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-98537
June 24, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
May 1, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
February 11, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 2, 2006
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 19, 2006
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 1, 2001
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
March 2, 1999
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...

References

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