scope:

This specification covers the detail requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each device as specified in MIL-S-19500.

See figure 1 (DO-35) and figure 2 (surface mount).

Maximum ratings are as shown in columns 6, 7, and 9 of table IV herein, and as follows:

P_T = 500 mW, surface mount device with T_EC = +125°C.

P_T = 500 mW at T_L = +75°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). (Derate I_Z to 0.0 mA dc at +175°C.)

−65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristics are shown in columns 2, 3, and 11 of table IV herein, and as follows:

2.4 V dc ≤ V_Z ≤ 200 V dc (nominal).

1N6309D through 1N6355D are 1 percent voltage tolerance.

1N6309C through 1N6355C are 2 percent voltage tolerance.

1N6309 through 1N6355 are 5 percent voltage tolerance.

R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) nonsurface mount.

R_ΘJL = 50°C/W (maximum) at L = 0 inch nonsurface mount.

R_ΘJEC (end cap) = 50°C/W (maximum) surface mount. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.