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NPFC - MIL-S-19500/533

SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355, 1N6309US THROUGH 1N6335US, JANTX, JANTXV, AND JANS

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Organization: NPFC
Publication Date: 2 December 1991
Status: inactive
Page Count: 22

Document History

November 20, 2020
SEMICONDUCTOR DEVICE DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope. This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent...
March 25, 2016
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
October 30, 2015
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
February 24, 2015
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 10, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, 1N6309UB THROUGH 1N6355UB, 1N6309UB2 THROUGH 1N6355UB2 1N6309UBCA THROUGH 1N6355UBCA, 1N6309UB2R THROUGH 1N6355UB2R 1N6309UBCC THROUGH 1N6355UBCC, 1N6309UBD THROUGH 1N6355UBD PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
July 12, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
June 22, 2012
Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N6309 through 1N6355; 1N6309US through 1N6355US, Plus C and D Tolerance Suffix, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
September 4, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
October 18, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
July 21, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
September 10, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1...
April 21, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANJ AND JANS
A description is not available for this item.
September 20, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANJ AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1...
April 15, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES IN6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 20, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four...
December 16, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES IN6309 THROUGH 1N6355; 1N6309US THROUGH 1N6335US; PLUS C AND D TOLERANCE SUFFIX; JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/533
December 2, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355, 1N6309US THROUGH 1N6335US, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 29, 1987
SEMICONDUCT02 DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS N3iKAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 25, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 TYROUGH 1N6355 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 22, 1983
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 TYROUGH 1N6355 JAN, JANTX, AND JANTXV
A description is not available for this item.
April 7, 1981
SEMICONDUCTOR DEVICE , DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355 JAN, JANTX AND JANTXV
A description is not available for this item.

References

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