NPFC - MIL-PRF-19500/533
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 30 October 2015 |
| Status: | inactive |
| Page Count: | 34 |
scope:
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1 percent (D). Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 20, 2020
SEMICONDUCTOR DEVICE DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent...
March 25, 2016
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
MIL-PRF-19500/533
October 30, 2015
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
February 24, 2015
DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 10, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, 1N6309UB THROUGH 1N6355UB, 1N6309UB2 THROUGH 1N6355UB2 1N6309UBCA THROUGH 1N6355UBCA, 1N6309UB2R THROUGH 1N6355UB2R 1N6309UBCC THROUGH 1N6355UBCC, 1N6309UBD THROUGH 1N6355UBD PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
July 12, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
June 22, 2012
Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N6309 through 1N6355; 1N6309US through 1N6355US, Plus C and D Tolerance Suffix, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
September 4, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
October 18, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US, PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
July 21, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1...
September 10, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1...
April 21, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANJ AND JANS
A description is not available for this item.
September 20, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANJ AND JANS
This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1...
April 15, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES IN6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 20, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four...
December 16, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES IN6309 THROUGH 1N6355; 1N6309US THROUGH 1N6335US; PLUS C AND D TOLERANCE SUFFIX; JANTX, JANTXV, AND JANS
A description is not available for this item.
December 2, 1991
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355, 1N6309US THROUGH 1N6335US, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 29, 1987
SEMICONDUCT02 DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS N3iKAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 25, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 TYROUGH 1N6355 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 22, 1983
SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 TYROUGH 1N6355 JAN, JANTX, AND JANTXV
A description is not available for this item.
April 7, 1981
SEMICONDUCTOR DEVICE , DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355 JAN, JANTX AND JANTXV
A description is not available for this item.