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DLA - SMD-5962-90603

MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 11 September 1990
Status: inactive
Page Count: 8
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."

The complete part number shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 REF-43 +2.5 V low-power precision voltage reference

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline G A-1 (8-lead, .370" × .185"), can P D-4 (8-lead, .405" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Input voltage (VIN) - - - - - - - - - - - - - - - - - 40 V dc Power dissipation (PD) - - - - - - - - - - - - - - - - 500 mW Output short-circuit duration - - - - - - - - - - - - Indefinite Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 60 seconds) - - - - - - - +300°C DICE junction temperature range (TJ) - - - - - - - - - −65°C to +150°C Thermal resistance, junction-to-case (ΘJC) - - - - - - See MIL-M-38510, appendix C Thermal resistance, junction-to-ambient (ΘJA): Case G - - - - - - - - - - - - - - - - - - - - - - - 150°C/W maximum Case P - - - - - - - - - - - - - - - - - - - - - - - 120°C/W maximum Case 2 - - - - - - - - - - - - - - - - - - - - - - - 110°C/W maximum

Input voltage (VIN) - - - - - - - - - - - - - - - - - +5 V dc Load current (IL) - - - - - - - - - - - - - - - - - - 0 mA Ambient operating temperature range (TA) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 7, 2022
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
March 15, 2017
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
January 19, 2017
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
February 21, 2007
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 11, 2000
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-90603
September 11, 1990
MICROCIRCUIT, LINEAR, +2.5 V LOW POWER, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."...

References

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