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DLA - SMD-5962-97535

MICROCIRCUIT, LINEAR, LOW POWER, PRECISION, BIFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 May 1997
Status: inactive
Page Count: 12
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 AD648S Low power, precision, BiFET dual op amp 02 AD648T Low power, precision, BiFET dual op amp

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VS) ...................................... ±18 V Internal power dissipation: Case G ............................................. 600 mW Case P ............................................. 900 mW Differential input voltage ............................... +VS and −VS Output short circuit duration ............................ Indefinite Storage temperature range ................................ −65°C to +150°C Operating temperature range .............................. −55°C to +125°C Lead temperature range (soldering, 60 seconds) ........... +300°C Thermal resistance, junction-to-ambient (θJA): Case G ............................................... 150°C/W Case P ............................................... 110°C/W Thermal resistance, junction-to-case (θJC): Case G ............................................... 65°C/W Case P ............................................... 22°C/W

Supply voltage (VS) ...................................... ±18 V Ambient operating temperature range (TA) ................. −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 14, 2017
MICROCIRCUIT, LINEAR, LOW POWER, PRECISION. BiFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
February 9, 2011
MICROCIRCUIT, LINEAR, LOW POWER, PRECISION. BiFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 29, 2003
MICROCIRCUIT, LINEAR, LOW POWER, PRECISION, BIFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 15, 2003
MICROCIRCUIT, LINEAR, LOW POWER, PRECISION, BIFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-97535
May 30, 1997
MICROCIRCUIT, LINEAR, LOW POWER, PRECISION, BIFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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