NPFC - MIL-PRF-19500/452
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
| Organization: | NPFC |
| Publication Date: | 18 September 2003 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two level of product assurance for each unencapsulated device type as die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
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