DLA - MIL-PRF-19500/452D
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
inactive
| Organization: | DLA |
| Publication Date: | 1 October 1997 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.
See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA), and figure 4 (JANHCB and JANKCB).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, primary electrical Characteristics at TA = +25°C.
Document History
January 29, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A THROUGH 1N4584A, LEADED AND SURFACE MOUNT PACKAGES AND UNENCAPSULATED DIE, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, and 1N4565AUR-1 through 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC, Radiation Hardened (Total Dose Only) Types JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; and JANKCM, D, L, R, F, G, H
A description is not available for this item.
March 8, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are...
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are...
March 26, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-reference, temperature compensated diodes. Four levels of product assurance are...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-reference, temperature compensated diodes. Four levels of product assurance are...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
May 13, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1 JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Five levels of product assurance are provided for each...
June 21, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
A description is not available for this item.
MIL-PRF-19500/452D
October 1, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage reference diodes. Four levels of product assurance are provided for each...
March 21, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4584A, 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1 JAN, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
August 2, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4584A, 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1 JAN, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for 6.4 volts ±5 percent, low bias current silicon voltage-reference diodes. Four levels of product assurance are provided for each device type as...
May 15, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES: 1N4565A THROUGH 1N4574A, 1N4564A-1 THROUGH 1N4574A-1, AND 1N4564AUR-1 THROUGH 1N4574AUR-1 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
August 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4574A, 1N4565A-1 THROUGH 1N4574A-1, AND 1N4565AUR-1 THROUGH 1N4574AUR-1 JANTX, JANTXV, AND JANS
A description is not available for this item.
August 14, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4574A AND 1N4565A-1 THROUGH 1N4574A-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 24, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4574A AND 1N4565A-1 THROUGH 1N4574A-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 2, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N4565A THROUGH 1N4574A AND TX1N4565A THROUGH TX1N4574A
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE, TYPES 1N4565A THROUGH 1N4574A AND TX1N4565A THROUGH TX1N4574A
A description is not available for this item.
June 30, 1971
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N4565A THROUGH 1N4574A and TX1N4565A THROUGH TX1N4574A
A description is not available for this item.
May 20, 1971
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N4565A THROUGH 1N4574A AND TX1N4565A THROUGH TX1N4574A
A description is not available for this item.