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DLA - SMD-5962-87610 REV A

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 11 August 1989
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC10 Triple three-input NAND gate 02 54AC11010 Triple three-input NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package F F-5 (16-lead, .440" × .285" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × 100"), square chip carrier package

Supply voltage range 1/ -- - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - ±50 mA DC VCC or GND current - - - - - - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - - +260°C Thermal resistance, junction-to-case (θJC) - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - - - +175°C

Supply voltage (VCC) 3/ - - - - - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - - −55°C to +125°C Input rise or fall times, VCC = 3.6 V, VCC = 5.5 V - 0 to 8 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 22, 2019
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 8, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
May 17, 2004
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 1, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-87610 REV A
August 11, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 5, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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