DLA - SMD-5962-87610 REV C
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 17 May 2004 |
| Status: | inactive |
| Page Count: | 18 |
Document History
February 22, 2019
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 8, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87610 REV C
May 17, 2004
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 1, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
August 11, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 5, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.