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DLA - SMD-5962-89935

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 October 1992
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class a microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7C192 64K × 4 SRAM Separate I/O 45 ns 02 7C192 64K × 4 SRAM Separate I/O 35 ns 03 7C192 64K × 4 SRAM Separate I/O 25 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 dual in-line Y GDFP2-F28 28 flat pack Z CQCC4-N28 28 rectangular leadless chip carrier

Supply voltage to ground potential - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in High-Z state- - −0.5 V dc to +7.0 V dc DC Input voltage - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - 20 mA Maximum power dissipation - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases X, Y, Z, and U - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (Tj) 1/ - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - −65°C to +150°C

Supply voltage (VCC) - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.2 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 3, 2023
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K x 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
A description is not available for this item.
May 23, 2016
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K x 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 6, 2007
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 30, 2000
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89935
October 30, 1992
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing describes device requirements for class a microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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