scope:

This specification covers the detail requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. One level of product assurance is provided for die.

See 3.3 (similar to DO-35 and DO-213AA).

Maximum ratings are as shown in column 4 of table IV herein and as follows:

P_T = 500 mW, (DO-35) at T_L = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). Derate I_Z to 0.0 mA dc at +175°C. P_T = 500 mW (DO-213AA) at T_EC = +125°C, derate to 0 at +175°C. −65°C ≤ T_OP ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic are as shown in columns 2, 9, 12, and 14 of table IV herein and as follows:

2.4 V dc ≤ V_Z ≤ 12 V dc 1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are 5 percent voltage tolerance. 1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are 2 percent voltage tolerance. 1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are 1 percent voltage tolerance. Thermal resistance: R_ΘJL = 250°C/W maximum at L = .375 inch (9.53 mm) (DO-35). R_ΘJEC = 100°C/W maximum. Junction to end-caps (DO-213AA).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.