NPFC - MIL-S-19500/127
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1 lN4370AUR-1 THROUGH lN4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-I, JAN, JANTX, JANTXV, AND JANC
| Organization: | NPFC |
| Publication Date: | 8 September 1992 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the detail requirements for 475 milliwatt, silicon, voltage regulator diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figures 1, 2, and 3, (D0-35), (DO-213AA), and JANC.
Maximum ratings are as shown in column 4 of table VI herein and as follows:
PT = 500 mW, (D0-35) at TL = 75°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). Derate IZ to 0.0 mA dc at +200°C.
PT = 500 mW (DO-213AA) at TEC = 150°C, derate to 0 at +200°C.
−65°C ≤ TOP ≤ +200°C; −65°C ≤ TSTG ≤ +200°C
Primary electrical characteristic are as shown in columns 2, 9, 12, and 14 of table VI herein and as follows:
2.4 V dc ≤ VZ ≤ 12 V dc
Thermal resistance:
RθJL = 250°C/W maximum at L = .375 inch (9.53 mm) (D0-35). RθJEC = 100°C/W maximum. Junction to end-caps (DO-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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