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DLA - SMD-5962-87514 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 January 1993
Status: inactive
Page Count: 29
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

The case outline(s) shall be designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U See figure 1 32 "J" leaded cerquad package X GDIP1-128 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP4-F28 28 Flat pack

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . −0.3 V dc to +6.25 V dc Storage temperature range . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . +300°C Junction temperature (TJ) 2/ . . . . . . . . . . . . . . . . +175°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . See MIL-STD-1835 Input voltage range (VIL, VIH) . . . . . . . . . . . . . . −0.3 V dc to +6.25 V dc Data retention . . . . . . . . . . . . . . . . . . . . . . . 10 years (minimum) Endurance: Device types 01 through 04, 06 through 26, and 28. . . . . 10,000 cycles/byte (minimum) Devices types 05 and 27. . . . . . . . . . . . . . . . . . 10,000 cycles /byte (minimum) Chip clear voltage (VH). . . . . . . . . . . . . . . . . . . 15.0 V dc

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Case operating temperature range (TC). . . . . . . . . . . . −55°C to +125°C Input voltage, low range (VIL) . . . . . . . . . . . . . . . −0.1 V dc to +0.8 V dc Input voltage, high range (VIH). . . . . . . . . . . . . . . +2.0 V dc to +0.3 V dc Chip clear voltage range (VH). . . . . . . . . . . . . . . . 12 V dc to 13 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 20, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 25, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 4, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
August 12, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
April 6, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN shall be as shown in the...
SMD-5962-87514 REV B
January 5, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 7, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.
July 1, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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