DLA - SMD-5962-87514 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 6 April 1997 |
| Status: | inactive |
| Page Count: | 28 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Generic Access Write Write End of write Device type number Circuit function time speed mode indicator Endurance 01 (see 6.4) (8K × 8 EEPROM) 350 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 02 300 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 03 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 04 200 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 05 250 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling 100,000 cycles 06 350 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 07 300 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 08 250 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 09 200 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 10 120 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 11 90 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 12 70 ns 2 ms byte/page [D bar][A bar][T bar][A bar] polling 10,000 cycles 13 350 ns 1 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 14 300 ns 1 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 15 250 ns 1 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 16 200 ns 1 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 17 150 ns 1 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 18 350 ns 1 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 19 300 ns 1 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 20 250 ns 1 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 21 200 ns 1 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 22 150 ns 1 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 23 350 ns 10 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 24 300 ns 10 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 25 250 ns 10 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 26 200 ns 10 ms byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles 27 250 ns 10 ms byte RDY/[B bar][U bar][S bar][Y bar] 100,000 cycles 28 200 ns 200 µs byte RDY/[B bar][U bar][S bar][Y bar] 10,000 cycles
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style U See figure 1 32 "J" leaded cerquad package X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP4-F28 28 Flat pack
Supply voltage range (VCC) ....................
Supply voltage range (VCC) ....................
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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