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DLA - SMD-5962-93087 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 13 July 1993
Status: inactive
Page Count: 23
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 110 EE CMOS 900-gate programmable 20 ns array logic

The device class designator shall be a single letter identifying the product assurance level (see 6.6 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X see figure 1 44 leaded chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) . . . . . . . . −0.5 V dc to +7.0 V dc Programming supply voltage range (VPP) . . −0.5 V dc to +9.50 V dc DC input voltage range . . . . . . . . . . −0.5 V dc to VCC +0.5 V dc Power dissipation (PD). . . . . . . . . . . .935 W Storage temperature range . . . . . . . . . −65°C to +150°C Junction temperature (TJ) 2/. . . . . . . . +200°C Thermal resistance, junction-to-case (θJC): Case X . . . . . . . . . . . . . . . . . 20° C/W 3/ DC supply current (ICC or ISS) . . . . . . 170 mA DC output current (IO) per pin. . . . . . . +25 mA Endurance . . . . . . . . . . . . . . . . . 100 cycles (minimum) Data retention. . . . . . . . . . . . . . . 20 years minimum

Supply voltage range (VCC). . . . . . . . . +4.5 V dc to +5.5 V dc Minimum high level input voltage range (VIH) . . . . . . . . . . . 2.0 V dc to VCC +0.5 V dc Maximum low level input voltage range (VIL) . . . . . . . . . . . 0.5 V dc to +0.8 V dc Case operating temperature range (TC) . . . −55°C to +125°C Input rise time (TR) . . . . . . . . . . . 50 ns maximum Input fall time (TE) . . . . . . . . . . . 50 ns maximum Clock pins, rise time . . . . . . . . . . . 10 ns maximum Clock pins, fall time . . . . . . . . . . . 10 ns maximum

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . 5/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

January 19, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE, LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
November 23, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class M and Q), and nontraditional performance environment...
SMD-5962-93087 REV A
July 13, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
February 25, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.

References

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