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DLA - SMD-5962-90969

MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 November 1990
Status: inactive
Page Count: 13
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V devices shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked device shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 TLC3704M Quad, low power, differential voltage comparator

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

For device classes M, B, and S, case outline(s) shall meet the requirements in appendix C of MIL-M-38510 and as listed below. For device classes Q and V, case outline(s) shall meet the requirements of MIL-I-38535, appendix C of MIL-M-38510, and as listed below.

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage (VDD) - - - - - - - - - - - - - - - - - - - −0.3 V dc to 18 V dc Differential input voltage (VID) 3/ - - - - - - - - - - - ±18 V dc Input voltage (VI) - - - - - - - - - - - - - - - - - - - - −0.3 V dc to VDD Output voltage (VO) - - - - - - - - - - - - - - - - - - - −0.3 V dc to VDD Input current (II) - - - - - - - - - - - - - - - - - - - - ±5 mA Output current (IO) (each output) - - - - - - - - - - - - ±20 mA Total current into VDD terminal - - - - - - - - - - - - - 40 mA Total current out of ground terminal - - - - - - - - - - - 60 mA Storage temperature range - - - - - - - - - - - - - - - - −65°C to 150°C Ambient temperature for 60 seconds: 2 package - - - - - - +260°C Lead temperature soldering, 1.6 mm (0.0625 inch) from case for 60 seconds: C package - - - - - - - - - - - - - - - - - - - - - - - +300°C Power dissipation (PD), (TA ≤ +25°C) 4/ - - - - - - - - - 1375 mW Thermal resistance, junction-to-case (ΘJC) - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - - - +150°C

Supply voltage (VDD) - - - - - - - - - - - - - - - - - - - 4 V dc minimum, 16 V dc maximum Common-mode input voltage (VIC) - - - - - - - - - - - - - 0 V dc minimum, VDD −1.5 dc V maximum High level output current (IOH) - - - - - - - - - - - - - −20 mA maximum Low level output current (IOL) - - - - - - - - - - - - - - 20 mA maximum Ambient operating temperature (TA) - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 13, 2019
MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
October 8, 2013
MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
January 30, 2007
MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 25, 2001
MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90969
November 2, 1990
MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
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