scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 26CT31RH Radiation hardened, quad differential line driver

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E CDIP2-TI6 16 Dual-in-line X CDFP4-Fl6 16 Flat-pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-PRF-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage . . . . . . . . . . . . . . . . . . . −0.5 V to +7.0 V Input, output or I/O voltage . . . . . . . . . . . . −0.5 V to VDD+0.5 V Output voltage with power off (0 V) . . . . . . . . . −0.5 V to +7.0 V DC diode Input current (any input) . . . . . . . . . ±20 mA DC drain current (any input) . . . . . . . . . . . . 350 mA DC VDD or ground current . . . . . . . . . . . . . . 400 mA Storage temperature range . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . 300°C Thermal resistance, junction-to-case (θ_JC) . . . . . See MIL-STD-1835 Thermal resistance, junction-to-ambient (θ_JA) . . . . Dip package . . . . . . . . . . . . . . . .. . . 75° C/W Flatpack package . . . . . . . . . . . . . . . . . 95° C/W Power dissipation at 125°C (P_D) . . . . . . . . . . . 0.44 W 2/ For T = −55°C to 125°C . . . . . . . . . . . . . . Dip package . . . . . . . . . . . . . . . . . . .667 W Flatpack package . . . . . . . . . . . . . . . .526 W

Operating temperature range (T_A). . . . . . . . . . . . −55°C to 125°C Supply voltage range (V_DD). . . . . . . . . . . . . . . +4.5 V to +5.5 V Low input voltage (V_IL) . . . . . . . . . . . . . . . . 0 V to 0.8 V, maximum High input voltage (V_IH). . . . . . . . . . . . . . . . V_DD to V_DD/2 V, minimum Input rise and fall time . . . . . . . . . . . . . . . 500 ns, maximum Dynamic current (I_DYN) at +25°C . . . . . . . . . . . . 3 mA Power dissipation capacitance (CPD) at +25°C. . . . . . 170 pF Radiation features: 3/ SEP effective LET number of upsets . . . . . . . . . . >100[Mev/mg/cm²] Neutron . . . . . . . . . . . . . . . . . . . . . . . . 1 × 10¹⁴ neutrons/cm² Dose rate upset . . . . . . . . . . . . . . . . . . . . 5 × 10⁸ rads(SI)/sec Dose rate survivability . . . . . . . . . . . . . . . . 5 × 10¹¹ rads(SI)/sec

intended Use: