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DLA - MIL-M-38510/340C

MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 11 January 1988
Status: inactive
Page Count: 16
scope:

This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the part number.

The part number shall be in accordance with MIL-M-38510.

The device type shall be as follows:

Device type Circuit 01 Quadruple, 2-input positive AND gate 02 Triple, 3-input positive AND gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2A (20-terminal, .350" × .350"), square chip carrier package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - −1.2 V at −18 mA to +7.0 V Storage temperature range - - - - - - - - −65°C to +150°C Maximum power dissipation per device( PD) 1/ Device type 01 - - - - - - - - - - - - - 71 mW Device type 02 - - - - - - - - - - - - - 53 mW Lead temperature (soldering, 10 seconds) - 300°C Thermal resistance, junction-to-case (θJC): Cases A, B, C, D, X, and 2 - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/ - - - - - - - - - 175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage - - - - - - - - - - - - - - 4.5 minimum to 5.5 V maximum Minimum high level input voltage (VIH) - - 2.0 V Maximum low level input voltage (VIL)- - - 0.8 V Normalized fanout (each output),3/ Low logic level- - - - - - - - - - - - - 33 maximum High logic level - - - - - - - - - - - - 50 maximum Case operating temperature range (TC)- - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.

Document History

Microcircuits, Digital, Bipolar Advanced Schottky TTL, and Gates, Monolithic Silicon
A description is not available for this item.
October 29, 2018
Microcircuits, Digital, Bipolar Advanced Schottky TTL, and Gates, Monolithic Silicon
A description is not available for this item.
January 17, 2014
Microcircuits, Digital, Bipolar Advanced Schottky TTL, and Gates, Monolithic Silicon
A description is not available for this item.
April 2, 2009
Microcircuits, Digital, Bipolar Advanced Schottky TTL, and Gates, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and...
September 22, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and...
July 9, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
October 16, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/340C
January 11, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and...
January 27, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
June 24, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 9, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
December 10, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
May 19, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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