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DLA - SMD-5962-93235

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8 BIT EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 25 March 1994
Status: inactive
Page Count: 23
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class N microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA Levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time Endurance 01 28F020 (256 K × 8) CMOS EEPROM 200 ns 10000 cycles 02 28F020 (256 K × 8) CMOS EEPROM 150 ns 10000 cycles 03 28F020 (256 K × 8) CM0S EEPROM 120 ns 10000 cycles 04 28F020 (256 K × 8) CMOS EEPROM 90 ns 10000 cycles 05 28F020A (256 K × 8) CMOS EEPROM 200 ns 100,000 cycles 06 28F020A (256 K × 8) CMOS EEPROM 150 ns 100,000 cycles 07 28F020A (256 K × 8) CM0S EEPROM 120 ns 100,000 cycles 08 28F020A (256 K × 8) CMOS EEPROM 90 ns 100,000 cycles

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U See figure 1 32 Flat pack X GDIP1-T32 or CDIP2-T32 32 Dual-in-line

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 2/ . . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Storage temperature range (Tstg) . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . +300°C Junction temperature (TJ) 3/ . . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) (case outline X) . . . See MIL-STD-1835 Thermal resistance, junction-to-case (ΘJC) (case outline U) . . . . 27°C/W Voltage on any pin with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Voltage on pin Ag with respect to ground 4/ . . . . . . . . . . . . −2.0 V dc to +13.5 V dc VPP supply voltage with respect to ground 4/ . . . . . . . . . . . −2.0 V dc to +14.0 V dc VCC supply voltage with respect to ground 2/ . . . . . . . . . . . −2.0 V dc to +7.0 V dc Output short circuit current 5/ . . . . . . . . . . . . . . . . . . 200 mA Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years, minimum Endurance (Device types 01-04) . . . . . . . . . . . . . . . . . . 10000 cycles/byte, minimum (Device types 05-08) . . . . . . . . . . . . . . . . . . 100,000 cycles/byte, minimum

Supply voltage range (VCC) . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Operating temperature range (Tcase) . . . . . . . . . −55°C to +125°C Low level input voltage range (VIL). . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH) . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range, CMOS (VIH) . . . . . . VCC −0.5 V dc to VCC +0.5 V dc Chip clear (VP) . . . . . . . . . . . . . . . . . . . 11.4 V dc to 12.6 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . xx percent 7/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 13, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 28, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-93235
March 25, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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