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DLA - SMD-5962-88518 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 15 April 1994
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 512 × 8-bit registered PROM 30 02 512 × 8-bit registered PROM 35 03 512 × 8-bit registered PROM 40 04 512 × 8-bit registered PROM 30 05 512 × 8-bit registered PROM 35 06 512 × 8-bit registered PROM 40 07 512 × 8-bit registered PROM 25

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style L CDIP4-T24 or GDIP3-T24 24 Dual-in-line 3 CQCC1-N28 28 Square chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range to ground potential (VCC) - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage range applied to the outputs in the high Z state - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation - - - - - - - - - - - - - - - - - - 1.0 W 3/ Lead temperature (soldering, 10 seconds) - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - +150°C 4/ Storage temperature range (TSTG) - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - - - - - - −55°C to +125°C Data retention - - - - - - - - - - - - - - - - - - - - - - - - 10 years, minimum

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Input high voltage range (VIH) - - - - - - - - - - - - - - - - +2.0 V dc Input low voltage range (VIL) - - - - - - - - - - - - - - - - +0.8 V dc Case operating temperature range (TC) - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

December 16, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 15, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 20, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88518 REV B
April 15, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 5, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 In conjunction with compliant non-JAN devices"....
July 11, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
A description is not available for this item.

References

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