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DLA - SMD-5962-88518 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 November 1993
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 In conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.4 512 × 8 registered PROM 30 ns 02 See 6.4 512 × 8 registered PROM 35 ns 03 See 6.4 512 × 8 registered PROM 40 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range- - - - - - - - - - - - −0.5 V dc to 7.0 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device - 1.0 W 2/ Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC) See MIL-M-38510,, appendix C Junction temperature (TJ) - - - - - - - - - +150°C 3/ DC voltage applied to outputs in high Z state −0.5 V dc to +7.0 V dc DC input voltage range- - - - - - - - - - - −3.0 V dc to +7.0 V dc

Supply voltage (VCC) - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum DC programming voltage - - - - - - - - - - - +14.0 V dc Minimum high level input voltage (VIH) - - - +2.0 V dc Maximum low level input voltage (VIL)- - - - +0.8 V dc Case operating temperature range (TC)- - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

December 16, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 15, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 20, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
A description is not available for this item.
April 15, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-88518 REV A
November 5, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 In conjunction with compliant non-JAN devices"....
July 11, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 8 REGISTERED PROM, MONOLITHIC SILICON
A description is not available for this item.

References

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