DLA - SMD-5962-97631
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 11 September 1998 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits... View More
Document History
January 16, 2024
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
May 29, 2013
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD-5962-97631
September 11, 1998
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...