scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RNA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RNA marked devices meet the MIL-PRF-38535 specified RNA levels and are marked with the appropriate RNA designator. Device class M RNA marked devices meet the MIL-PRF-38535, appendix A specified RNA levels and are marked with the appropriate RNA designator. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type 1/ Generic number 2/ Circuit function Access time 01 28F64 8K × 8-bit radiation hardened PROM 35 ns 02 28F64 8K × 8-bit Radiation hardened PROM 45 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-PRF-38535

The case outline(s)(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range . . . . . . . . . . . . . . . . . . −0.3 V dc to +7.0 V dc Voltage on any pin with respect to ground . . . . . . . . −0.5 V dc to V_DD +0.5 V dc Maximum power dissipation (P_D) . . . . . . . . . . . . . 1.5 W Lead temperature (soldering, 10 seconds maximum) . . . . +260°C Thermal resistance, junction-to-case (Θ_JC) . . . . . . . See MIL-STD-1835 Junction temperature (T_J) . . . . . . . . . . . . . . . . +175°C Storage temperature range . . . . . . . . . . . . . . . . −65°C to +150°C Temperature under bias . . . . . . . . . . . . . . . . . −55°C to +125°C

Supply voltage (V_DD) . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Ground voltage (GND) . . . . . . . . . . . . . . . . . . 0.0 V dc Input high voltage (V_IH) . . . . . . . . . . . . . . . . +2.4 V dc minimum to V_CC Input low voltage (V_IL) . . . . . . . . . . . . . . . . . 0.0 V dc to +0.8 V dc maximum Case operating temperature range (T_C) . . . . . . . . . . −55°C to +125°C Radiation features: Total dose irradiation . . . . . . . . . . . . . . . . ≥ 1.0 MRads(Si) Single event phenomenon (SEP) effective Linear energy threshold (LET) with no upsets . . . . ≥ 128 MEV-CM²/mg Neutron irradiation . . . . . . . . . . . . . . . . . . 1 − 10¹⁴ neutrons/cm² 4/

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . 100 percent

intended Use: