scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HS9008RH Radiation hardened CMOS flash 8-bit A/D converter

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line Y CDFP3-F28 28 Flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

DC supply voltage range, V_DDD = V_DDA (Referenced to V_SSD = V_SSA = GND)- - - −0.3 V dc to +7.0 V dc Input voltage range: [C bar][E bar][1 bar], CE2, CLK, V_REF−, V_REF+, V_IN, ½ R - - - - - - - V_SS − 0.3 V dc to V_DD + 0.3 V dc Output voltage range: B1 - B8, OF (Outputs off) - - - - - - - - - - - - - - V_SS − 0.3 V dc to V_DD + 0.3 V dc DC input current [C bar][E bar][1 bar], CE2, CLK, V_IN, B1 - B8, OF - - - - - - - - - - - - - 10 mA Storage temperature range - - - - - - - - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum package power dissipation at T_A = +125°C (P_D): 2/ Case outline X - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1.02 W Case outline Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.77 W Thermal resistance, junction-to-case (Θ_JC): Case outline X - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 9°C/W Case outline Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 10°C/W Thermal resistance, junction-to-ambient (Θ_JA): Case outline X - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 49°C/W Case outline Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 65°C/W Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - - - - - +300°C Junction temperature (T_J) - - - - - - - - - - - - - - - - - - - - - - - - - +175°C

Operating voltage range (V_DDD = V_DDA) - - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Digital input low voltage (V_IL) - - - - - - - - - - - - - - - - - - - - - - 0 V to 0.2 V_DD Input high voltage (V_IH) - - - - - - - - - - - - - - - - - - - - - - - - - 0.8 V_DD to V_DD Ambient operating temperature range (T_A)- - - - - - - - - - - - - - - - - - −55°C to +125°C Radiation features: SEP effective let no upset 3/ - - - - - - - - - - - - - - - - - - - - - - >100 MeV/(cm²/mg) Neutron irradiation 3/ - - - - - - - - - - - - - - - - - - - - - - - - - >1 × 10¹⁴ neutrons/cm² Dose rate upset (20 ns pulse) 3/- - - - - - - - - - - - - - - - - - - - - >5 × 10⁸ RAD/sec Total dose - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - >300 K RAD (Si) Dose rate survivability 3/- - - - - - - - - - - - - - - - - - - - - - - - >5 × 10¹¹ RADS (Si)/sec

intended Use: