scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 16K × 4 SRAM separate I/O and transparent write 45 ns 02 16K × 4 SRAM separate I/O and transparent write 35 ns 03 16K × 4 SRAM separate I/O and transparent write 25 ns 04 16K × 4 SRAM separate I/O and transparent write 20 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Descriptive designator Terminals Package Style X CDIP3-T28 or GDIP4-T28 28 dual-in-line Y GDFP2-F28 28 flat pack Z CQCC4-N28 28 rectangular leadless chip carrier U CGCC3-N28 28 rectangular leadless chip carrier

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range to ground potential (V_CC) - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage range applied to outputs in High Z state - - - - - - - −0.5 V dc to +7.0 V dc DC Input voltage range (V_IN) 2/ - - - - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - - - - - - - 20 mA Maximum power dissipation - - - - - - - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - +260°C Thermal resistance, junction-to-case (θ_JC): Cases X, Y, and Z - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (T_J) 3/ - - - - - - - - - - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage range (V_CC) - - - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) (V_SS) - - - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (V_IH) - - - - - - - - - - - - - - - - - - - - - 2.2 V dc minimum Input low voltage (V_IL) - - - - - - - - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (T_C) - - - - - - - - - - - - - - −55°C to +125°C

Functional algorithms are test patterns which define the exact sequence of events used to verify proper operation of a random access memory (RAM). Each algorithm serves a specific purpose for the testing of the device. It is understood that all manufacturers do not have the same test equipment; therefore, it becomes the responsibility of each manufacturer to guarantee that the test patterns described herein are followed as closely as possible, or equivalent patterns be used that serve the same purpose. Each manufacturer should demonstrate that this condition wilt be met. Algorithms shall be applied to the device in a topologically pure fashion. This appendix is a mandatory part of the specification. The information contained herein is intended for compliance.

intended Use: