DOD - SMD 5962-90594
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O AND TRANSPARENT WRITE, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 25 August 1995 |
| Status: | inactive |
| Page Count: | 19 |
Document History
October 10, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O and TRANSPARENT WRITE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 13, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O and TRANSPARENT WRITE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 7, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O and TRANSPARENT WRITE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-90594
August 25, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O AND TRANSPARENT WRITE, MONOLITHIC SILICON
A description is not available for this item.
December 4, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 4 SRAM WITH SEPARATE I/O AND TRANSPARENT WRITE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....