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DLA - SMD-5962-92153 REV B

MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 January 1994
Status: inactive
Page Count: 35
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Input/output levels Chip enable Access time 01 32K × 8 CMOS SRAM CMOS Dual 60 ns 02 32K × 8 CMOS SRAM TTL Dual 60 ns 03 32K × 8 CMOS SRAM CMOS Dual 40 ns 04 32K × 8 CMOS SRAM TTL Dual 40 ns 05 32K × 8 CMOS SRAM CMOS Dual 60 ns 06 32K × 8 CMOS SRAM TTL Dual 60 ns 07 32K × 8 CMOS SRAM CMOS Dual 40 ns 08 32K × 8 CMOS SRAM TTL Dual 40 ns 09 32K × 8 CMOS SRAM CMOS Single 55 ns 10 32K × 8 CMOS SRAM TTL Single 55 ns 11 32K × 8 CMOS SRAM CMOS Dual 55 ns 12 32K × 8 CMOS SRAM TTL Dual 55 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 36 Flat pack Y See figure 1 40 Flat pack Z See figure 1 36 Flat pack U See figure 1 36 Flat pack T See figure 1 36 Flat pack M GDIP1-T28 or CDIP2-T28 28 Dual-in-line

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) -------------------------------- −0.5 V dc to +7.0 V dc DC input voltage range (VIN) ------------------------------ −0.5 V dc to VCC + 0.3 V dc DC output voltage range (VOUT) ---------------------------- −0.5 V dc to VCC + 0.3 V dc Storage temperature range --------------------------------- −65°C to +150°C Lead temperature (soldering, 5 seconds) ------------------- +250°C Thermal resistance, junction-to-case (ΘJC): Cases X, Y, Z, and U ------------------------------------ 3.3°C/watt Case T -------------------------------------------------- 10°C/watt Case M -------------------------------------------------- See MIL-STD-1835 Output voltage applied to high Z state -------------------- −0.3 V dc to VCC + 0.3 V dc Maximum power dissipation (PD) ---------------------------- 2 watts Maximum junction temperature (TJ) ------------------------- +150°C 4/

Supply voltage range (VCC) ------------------------------------- 4.5 V dc (min) to 5.5 V dc (max) Supply voltage (VSS) ------------------------------------------- 0.0 V dc High level input voltage range (VIH): Device types 01,03,09,11 (CMOS levels) ----------------------- 3.5 V dc to VCC + 0.3 V dc Device types 05,07 (CMOS levels) ----------------------------- 0.7 × VCC to VCC + 0.3 V dc Device types 02,04,06,08,10,12 (TTL levels) ------------------ 2.2 V dc to VCC + 0.3 V dc Low level input voltage range (VIL): Device types 01,03,09,11 (CMOS levels) ----------------------- −0.3 V dc to 1.5 V dc Device types 05,07 (CMOS levels) ----------------------------- −0.3 V dc to 0.3 × VCC Device types 02,04,06,08,10,12 (TTl levels) ------------------ −0.3 V dc to 0.8 V dc Case operating temperature range (TC) -------------------------- −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) -------------------- 100 percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 11, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
August 1, 2006
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 17, 2000
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
August 27, 1997
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 31, 1997
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
May 6, 1996
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
April 11, 1996
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
November 17, 1995
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
August 8, 1994
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
June 24, 1994
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
May 20, 1994
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-92153 REV B
January 5, 1994
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
September 16, 1993
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
September 30, 1992
MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
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