DLA - SMD-5962-96766 REV A
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 27 June 1996 |
| Status: | inactive |
| Page Count: | 22 |
Document History
December 7, 2023
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
May 1, 2013
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD-5962-96766 REV A
June 27, 1996
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
April 16, 1996
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...