NPFC - MIL-PRF-19500/607
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
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| Organization: | NPFC |
| Publication Date: | 6 August 2004 |
| Status: | active |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance is provided for unencapsulated device.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
July 23, 2021
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
A description is not available for this item.
May 24, 2016
Semiconductor Device, Field Effect Transistors, N-Channel and PChannel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
A description is not available for this item.
July 14, 2011
Semiconductor Device, Field Effect Transistors, N-Channel and PChannel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as...
MIL-PRF-19500/607
August 6, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as...
November 22, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
A description is not available for this item.
February 11, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC
This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each device type as...
January 8, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
September 1, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels...