NPFC - MIL-S-19500/607
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC
| Organization: | NPFC |
| Publication Date: | 1 September 1992 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the detail requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance for die (element evaluation).
See figure 1 (M0-036AB), see figure 2 for JANC die dimensions.
Maximum ratings (TA = +25°C, unless otherwise specified). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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