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DOD - SMD 5962-87647

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 15 December 1992
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC03 Quad 2-input NAND gate with open drain outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾") dual-in-line package 2 C-2 (20-terminal, .350" × .350") square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - ±25 mA DC VCC or GND current (per pin) - - - - - - - - - - - ±50 mA Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - - - - - - - - - - 500 mW Lead temperature (soldering, 10 Seconds) - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case C - - - - - - - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2 - - - - - - - - - - - - - - - - - - - - - - - 60°C/W 3/ Junction temperature (TJ) - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - +2.0 V dc to +6.0 V dc Case operating temperature range (TC) - - - - - - - - −55°0 to +125°C Input rise or fall time: VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - 0 to 1000 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - 0 to 500 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - 0 to 400 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 15, 2020
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
June 6, 2013
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 12, 2006
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-87647
December 15, 1992
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 24, 1987
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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