DLA - SMD-5962-87647 REV B
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 12 October 2006 |
| Status: | inactive |
| Page Count: | 12 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
July 15, 2020
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Scope.
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
June 6, 2013
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87647 REV B
October 12, 2006
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 15, 1992
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 24, 1987
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.