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DOD - SMD 5962-87647

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 24 July 1987
Status: inactive
Page Count: 11

Document History

July 15, 2020
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
June 6, 2013
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 12, 2006
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 15, 1992
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD 5962-87647
July 24, 1987
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH OPEN DRAIN OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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