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DLA - SMD-5962-89625 REV B

MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 December 1997
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device Type Generic number Circuit function 01 LM6165 High speed operational amplifier

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X See figure 1 10 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage (V+ to V−).......................................36 V Differential input voltage 1/...................................±8 V Common-mode voltage.............................................(V+ −0.7 V) to (V− −7 V) Output short circuit to GND 2/..................................Continuous Operating supply voltage range..................................4.75 V to 32 V Power dissipation (PD) (all cases)..............................400 mW Storage temperature range......................................−65°C to + 150°C Lead temperature (soldering, 10 seconds)........................+260°C Junction temperature (Tj).......................................+150°C Thermal resistance, junction-to-case (ΘJC): Cases H, P, and X.............................................21°C/W Case 2...................................................... 20°C/W

Thermal resistance, junction-to-ambient (OjA): Cases H and X...................................................228°C/W still air 140°C/W at 500 linear feet per minute Case P..........................................................113°C/W still air 51°C/W at 500 linear feet per minute Case 2..........................................................90°C/W still air 60°C/W at 400 linear feet per minute

Positive supply voltage (V+)..................................... +15V Negative supply voltage (V−)......................................−15V Ambient operating temperature range (TA)..........................−55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

August 18, 2010
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 23, 2003
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
June 18, 1998
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-89625 REV B
December 9, 1997
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
December 5, 1991
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 8, 1990
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
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