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DLA - SMD-5962-89943

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 May 1990
Status: inactive
Page Count: 39
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.6) 4k × 9-bit parallel-serial FIFO 120 ns 02 (see 6.6) 4k × 9-bit parallel-serial FIFO 80 ns 03 (see 6.6) 4k × 9-bit parallel-serial FIFO 65 ns 04 (see 6.6) 4k × 9-bit parallel-serial FIFO 50 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline Q D-5 (40-lead, 2.096" × .620" ×.225"), dual-in-line package X C-5 (44-terminal, .662" × .662" × .120"), square chip carrier package

Terminal voltage with respect to ground- - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - - - - 50 mA Storage temperature range- - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC) - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) - - - - - - - - - - 2.2 V dc Maximum low level input voltage (VIL)- - - - - - - - - - - +0.8 V dc2/ Case operating temperature range (TC)- - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 10, 2018
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL-SERIAL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
April 1, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL-SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 22, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89943
May 12, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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