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DLA - SMD-5962-89943 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 June 1994
Status: inactive
Page Count: 35
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.6) 4k × 9-bit parallel-serial FIFO 120 ns 02 (see 6.6) 4k × 9-bit parallel-serial FIFO 80 ns 03 (see 6.6) 4k × 9-bit parallel-serial FIFO 65 ns 04 (see 6.6) 4k × 9-bit parallel-serial FIFO 50 ns 05 (see 6.6) 4k × 9-bit parallel-serial FIFO 40 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 Dual-in-line X CQCC1-N44 44 Square leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Terminal voltage with respect to ground . . . . . . . . . −0.5 V dc to +7.0 V dc DC output current . . . . . . . . . . . . . . . . . . . . 50 mA Storage temperature range . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . +260°C Thermal resistance, junction-to-case (QJC) . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . +150°C 1/

Supply voltage range (VCC) . . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) . . . . . . . . . 2.2 V dc Maximum low level input voltage (VIL) . . . . . . . . . . +0.8 V dc 2/ Case operating temperature range (TC) . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 10, 2018
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL-SERIAL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
April 1, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL-SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89943 REV A
June 22, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 12, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SERIAL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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